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Samsung M471A5244CB0-CWE 4GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB

Samsung M471A5244CB0-CWE 4GB vs Micron Technology 8ATF1G64AZ-3G2E1 8GB

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Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Punteggio complessivo
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Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471A5244CB0-CWE 4GB Motivi da considerare
Samsung M471A5244CB0-CWE 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    15.5 left arrow 14.7
    Valore medio nei test
Micron Technology 8ATF1G64AZ-3G2E1 8GB Motivi da considerare
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    12.4 left arrow 12.0
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M471A5244CB0-CWE 4GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR4
  • Latenza in PassMark, ns
    38 left arrow 38
  • Velocità di lettura, GB/s
    15.5 left arrow 14.7
  • Velocità di scrittura, GB/s
    12.0 left arrow 12.4
  • Larghezza di banda della memoria, mbps
    25600 left arrow 25600
Other
  • Descrizione
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • Temporizzazioni / Velocità di clock
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Classifica PassMark (più sono, meglio è)
    2283 left arrow 2908

Samsung M471A5244CB0-CWE 4GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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