Samsung M471B5173DB0-YK0 4GB vs Micron Technology 36ASF4G72LZ-2G3B1 32GB

Punteggio complessivo

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Punteggio complessivo

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5173DB0-YK0 4GB

Motivi da considerare
Samsung M471B5173DB0-YK0 4GB

Velocità di lettura più elevata, GB/s

12 11.2

Valore medio nei test
Velocità di scrittura più elevata, GB/s

7.8 7.6

Valore medio nei test

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Motivi da considerare
Micron Technology 36ASF4G72LZ-2G3B1 32GB

Al di sotto della latenza nei test PassMark, ns

34 45

Intorno -32% latenza inferiore
Larghezza di banda di memoria superiore, mbps

19200 12800

Intorno 1.5 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M471B5173DB0-YK0 4GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

45 34
Velocità di lettura, GB/s

12.0 11.2
Velocità di scrittura, GB/s

7.8 7.6
Larghezza di banda della memoria, mbps

12800 19200

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

1939 2245

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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