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Samsung M471B5173QH0-YK0 4GB
SK Hynix HMT351S6EFR8A-PB 4GB

Samsung M471B5173QH0-YK0 4GB vs SK Hynix HMT351S6EFR8A-PB 4GB

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Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Punteggio complessivo
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SK Hynix HMT351S6EFR8A-PB 4GB

SK Hynix HMT351S6EFR8A-PB 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5173QH0-YK0 4GB Motivi da considerare
Samsung M471B5173QH0-YK0 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    45 left arrow 46
    Intorno 2% latenza inferiore
SK Hynix HMT351S6EFR8A-PB 4GB Motivi da considerare
SK Hynix HMT351S6EFR8A-PB 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    12.5 left arrow 12.3
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    9.3 left arrow 8.0
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMT351S6EFR8A-PB 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    45 left arrow 46
  • Velocità di lettura, GB/s
    12.3 left arrow 12.5
  • Velocità di scrittura, GB/s
    8.0 left arrow 9.3
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    1992 left arrow 2048

Samsung M471B5173QH0-YK0 4GB Confronto tra le RAM

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

SK Hynix HMT351S6EFR8A-PB 4GB Confronto tra le RAM

G Skill Intl F3-1600C9-4GRSL 4GB
Samsung M471B1G73DB0-YK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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