Samsung M471B5273DH0-CK0 4GB vs Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Punteggio complessivo

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Punteggio complessivo

Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5273DH0-CK0 4GB

Motivi da considerare
Samsung M471B5273DH0-CK0 4GB

Velocità di lettura più elevata, GB/s

13.3 11.5

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.0 7.9

Valore medio nei test

Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Motivi da considerare
Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Al di sotto della latenza nei test PassMark, ns

30 41

Intorno -37% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M471B5273DH0-CK0 4GB

Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

41 30
Velocità di lettura, GB/s

13.3 11.5
Velocità di scrittura, GB/s

9.0 7.9
Larghezza di banda della memoria, mbps

12800 12800

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

2016 1992

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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