Samsung M471B5273DH0-CK0 4GB vs Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Puntuación global

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Puntuación global

Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Diferencias Especificaciones Comentarios

Diferencias

Samsung M471B5273DH0-CK0 4GB

Razones a tener en cuenta
Samsung M471B5273DH0-CK0 4GB

Informar de un error

Mayor velocidad de lectura, GB/s

13.3 11.5

Valor medio en las pruebas
Mayor velocidad de escritura, GB/s

9.0 7.9

Valor medio en las pruebas

Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Razones a tener en cuenta
Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Informar de un error

Por debajo de la latencia en las pruebas PassMark, ns

30 41

En -37% menor latencia

Especificaciones

Lista completa de especificaciones técnicas

Samsung M471B5273DH0-CK0 4GB

Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB

Principales características

Tipo de memoria

DDR3 DDR3
Latencia en PassMark, ns

41 30
Velocidad de lectura, GB/s

13.3 11.5
Velocidad de escritura, GB/s

9.0 7.9
Ancho de banda de la memoria, mbps

12800 12800

Other

Descripción

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Tiempos / Velocidad del reloj

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Clasificación PassMark (Cuanto más, mejor)

2016 1992

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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