Samsung M471B5673FH0-CH9 2GB vs Micron Technology 36ASF2G72PZ-2G3A3 16GB

Punteggio complessivo

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

Punteggio complessivo

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5673FH0-CH9 2GB

Motivi da considerare
Samsung M471B5673FH0-CH9 2GB

Velocità di lettura più elevata, GB/s

11.1 9.8

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.2 7.9

Valore medio nei test

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Motivi da considerare
Micron Technology 36ASF2G72PZ-2G3A3 16GB

Al di sotto della latenza nei test PassMark, ns

37 41

Intorno -11% latenza inferiore
Larghezza di banda di memoria superiore, mbps

19200 10600

Intorno 1.81 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M471B5673FH0-CH9 2GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

41 37
Velocità di lettura, GB/s

11.1 9.8
Velocità di scrittura, GB/s

8.2 7.9
Larghezza di banda della memoria, mbps

10600 19200

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

1348 2229

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Ultimi confronti

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Kingston 9905633-017.A00G 8GB

Kingston 9905633-017.A00G 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Apacer Technology 78.C1GQB.4032B 8GB

Apacer Technology 78.C1GQB.4032B 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Kingston 9905474-019.A00LF 2GB

Kingston 9905474-019.A00LF 2GB

Corsair CMD32GX4M4B3600C16 8GB

Corsair CMD32GX4M4B3600C16 8GB

Kingston 99U5403-050.A00LF 4GB

Kingston 99U5403-050.A00LF 4GB

G Skill Intl F4-4133C19-4GTZ 4GB

G Skill Intl F4-4133C19-4GTZ 4GB