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Samsung M471B5673FH0-CH9 2GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB

Samsung M471B5673FH0-CH9 2GB vs Micron Technology 36ASF2G72PZ-2G3A3 16GB

Overall score
star star star star star
Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

Overall score
star star star star star
Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Differences Specifications Comments

Differences

Samsung M471B5673FH0-CH9 2GB Reasons to consider
Samsung M471B5673FH0-CH9 2GB
Report a bug
  • Faster reading speed, GB/s
    11.1 left arrow 9.8
    Average value in the tests
  • Faster write speed, GB/s
    8.2 left arrow 7.9
    Average value in the tests
Micron Technology 36ASF2G72PZ-2G3A3 16GB Reasons to consider
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 41
    Around -11% lower latency
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5673FH0-CH9 2GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    41 left arrow 37
  • Read speed, GB/s
    11.1 left arrow 9.8
  • Write speed, GB/s
    8.2 left arrow 7.9
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1348 left arrow 2229

Samsung M471B5673FH0-CH9 2GB RAM comparisons

Crucial Technology BLS8G3N169ES4.16FE 8GB
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Micron Technology 36ASF2G72PZ-2G3A3 16GB RAM comparisons

SK Hynix HYMP112U64CP8-S5 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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