SK Hynix HMT351R7EFR8C-RD 4GB vs Samsung M474A1G43DB0-CPB 8GB

Punteggio complessivo

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Punteggio complessivo

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HMT351R7EFR8C-RD 4GB

Motivi da considerare
SK Hynix HMT351R7EFR8C-RD 4GB

Velocità di lettura più elevata, GB/s

9.8 9.7

Valore medio nei test
Velocità di scrittura più elevata, GB/s

7.2 6.8

Valore medio nei test

Samsung M474A1G43DB0-CPB 8GB

Motivi da considerare
Samsung M474A1G43DB0-CPB 8GB

Al di sotto della latenza nei test PassMark, ns

27 37

Intorno -37% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 14900

Intorno 1.14 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

SK Hynix HMT351R7EFR8C-RD 4GB

Samsung M474A1G43DB0-CPB 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

37 27
Velocità di lettura, GB/s

9.8 9.7
Velocità di scrittura, GB/s

7.2 6.8
Larghezza di banda della memoria, mbps

14900 17000

Other

Descrizione

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2065 1767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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