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SK Hynix HMT351U6CFR8C-H9 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB

SK Hynix HMT351U6CFR8C-H9 4GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB

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SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Punteggio complessivo
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Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HMT351U6CFR8C-H9 4GB Motivi da considerare
SK Hynix HMT351U6CFR8C-H9 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.7 left arrow 7.7
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.3 left arrow 6.8
    Valore medio nei test
Micron Technology 9ASF51272PZ-2G1AX 4GB Motivi da considerare
Micron Technology 9ASF51272PZ-2G1AX 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    39 left arrow 42
    Intorno -8% latenza inferiore
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 10600
    Intorno 1.6 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
SK Hynix HMT351U6CFR8C-H9 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    42 left arrow 39
  • Velocità di lettura, GB/s
    13.7 left arrow 7.7
  • Velocità di scrittura, GB/s
    8.3 left arrow 6.8
  • Larghezza di banda della memoria, mbps
    10600 left arrow 17000
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2152 left arrow 1768

SK Hynix HMT351U6CFR8C-H9 4GB Confronto tra le RAM

SK Hynix HMT451U7BFR8C-RD 4GB
Kllisre KRE-D3S1600M/8G 8GB

Micron Technology 9ASF51272PZ-2G1AX 4GB Confronto tra le RAM

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Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
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