A-DATA Technology ADOVE1A0834E 1GB vs Crucial Technology CT16G4DFD824A.M16FA 16GB

総合得点

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

総合得点

Crucial Technology CT16G4DFD824A.M16FA 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

相違点仕様コメント

相違点

A-DATA Technology ADOVE1A0834E 1GB

考慮すべき理由
A-DATA Technology ADOVE1A0834E 1GB

バグを報告する

Crucial Technology CT16G4DFD824A.M16FA 16GB

考慮すべき理由
Crucial Technology CT16G4DFD824A.M16FA 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

26 94

周辺 -262% 低遅延
読み出し速度の高速化、GB/s

16.5 1

テスト平均値
書き込み速度の高速化、GB/s

12.1 1,165.4

テスト平均値
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

94 26
読み出し速度、GB/s

1,882.0 16.5
書き込み速度、GB/秒

1,165.4 12.1
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

305 2891

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Apacer Technology D12.2755BS.001 16GB

Apacer Technology D12.2755BS.001 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-4000C18-16GTZN 16GB

G Skill Intl F4-4000C18-16GTZN 16GB

G Skill Intl F3-1600C11-4GNS 4GB

G Skill Intl F3-1600C11-4GNS 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

Samsung M378A4G43AB2-CWE 32GB

Samsung M378A4G43AB2-CWE 32GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Kingston 99U5713-002.A00G 4GB

Kingston 99U5713-002.A00G 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology CT8G4SFS824A.C8FJ 8GB

Crucial Technology CT8G4SFS824A.C8FJ 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD32GX4M4C3000C15 8GB

Corsair CMD32GX4M4C3000C15 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston KHX3200C20S4/16GX 16GB

Kingston KHX3200C20S4/16GX 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA84GL7AMR4N-TF 32GB

SK Hynix HMA84GL7AMR4N-TF 32GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

SK Hynix HMA42GR7MFR4N-TF 16GB

SK Hynix HMA42GR7MFR4N-TF 16GB