A-DATA Technology DQVE1908 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

総合得点

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

相違点仕様コメント

相違点

A-DATA Technology DQVE1908 512MB

考慮すべき理由
A-DATA Technology DQVE1908 512MB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

40 66

周辺 -65% 低遅延
読み出し速度の高速化、GB/s

9.1 2

テスト平均値
書き込み速度の高速化、GB/s

6.9 1,557.9

テスト平均値
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology DQVE1908 512MB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

66 40
読み出し速度、GB/s

2,775.5 9.1
書き込み速度、GB/秒

1,557.9 6.9
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

382 2031

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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