A-DATA Technology VDQVE1B16 2GB vs Samsung M378A2K43EB1-CWE 16GB

総合得点

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

総合得点

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

相違点仕様コメント

相違点

A-DATA Technology VDQVE1B16 2GB

考慮すべき理由
A-DATA Technology VDQVE1B16 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 18.5

テスト平均値
書き込み速度の高速化、GB/s

2,061.2 13.8

テスト平均値

Samsung M378A2K43EB1-CWE 16GB

考慮すべき理由
Samsung M378A2K43EB1-CWE 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

33 46

周辺 -39% 低遅延
より高いメモリ帯域幅、mbps

25600 6400

周辺 4 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology VDQVE1B16 2GB

Samsung M378A2K43EB1-CWE 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 33
読み出し速度、GB/s

4,937.3 18.5
書き込み速度、GB/秒

2,061.2 13.8
メモリ帯域幅、mbps

6400 25600

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
タイミング / クロック速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

759 3341

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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