G Skill Intl F3-2666C12-8GTXD 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

総合得点

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

相違点仕様コメント

相違点

G Skill Intl F3-2666C12-8GTXD 8GB

考慮すべき理由
G Skill Intl F3-2666C12-8GTXD 8GB

バグを報告する

読み出し速度の高速化、GB/s

18.2 13.8

テスト平均値
書き込み速度の高速化、GB/s

11.5 10.1

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

バグを報告する

より高いメモリ帯域幅、mbps

17000 10600

周辺 1.6 高帯域

仕様

技術仕様の完全リスト

G Skill Intl F3-2666C12-8GTXD 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 28
読み出し速度、GB/s

18.2 13.8
書き込み速度、GB/秒

11.5 10.1
メモリ帯域幅、mbps

10600 17000

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

3067 2179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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