Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Kingston K821PJ-MIB 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

総合得点

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

34 37

周辺 8% 低遅延

Kingston K821PJ-MIB 16GB

考慮すべき理由
Kingston K821PJ-MIB 16GB

バグを報告する

読み出し速度の高速化、GB/s

13.8 8.6

テスト平均値
書き込み速度の高速化、GB/s

11.0 5.8

テスト平均値
より高いメモリ帯域幅、mbps

19200 10600

周辺 1.81 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Kingston K821PJ-MIB 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

34 37
読み出し速度、GB/s

8.6 13.8
書き込み速度、GB/秒

5.8 11.0
メモリ帯域幅、mbps

10600 19200

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

1682 2458

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT8G4SFS632A 8GB

Crucial Technology CT8G4SFS632A 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Apacer Technology 78.CAGN4.4020B 8GB

Apacer Technology 78.CAGN4.4020B 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Smart Modular SF4641G8CKHI6DFSEG 8GB

Smart Modular SF4641G8CKHI6DFSEG 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

Team Group Inc. Team-Value-800 2GB

Team Group Inc. Team-Value-800 2GB

Panram International Corporation M424051 4GB

Panram International Corporation M424051 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3600C16-32GTZN 32GB

G Skill Intl F4-3600C16-32GTZN 32GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT8G4DFS832A.M8FR 8GB

Crucial Technology CT8G4DFS832A.M8FR 8GB