Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Samsung M474A2K43BB1-CPB 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

総合得点

Samsung M474A2K43BB1-CPB 16GB

Samsung M474A2K43BB1-CPB 16GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

バグを報告する

書き込み速度の高速化、GB/s

9.0 8.6

テスト平均値

Samsung M474A2K43BB1-CPB 16GB

考慮すべき理由
Samsung M474A2K43BB1-CPB 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 29

周辺 -4% 低遅延
読み出し速度の高速化、GB/s

14.3 13.4

テスト平均値
より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Samsung M474A2K43BB1-CPB 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

29 28
読み出し速度、GB/s

13.4 14.3
書き込み速度、GB/秒

9.0 8.6
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2423 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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