Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs G Skill Intl F4-3200C14-16GTZKY 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

総合得点

G Skill Intl F4-3200C14-16GTZKY 16GB

G Skill Intl F4-3200C14-16GTZKY 16GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

バグを報告する

G Skill Intl F4-3200C14-16GTZKY 16GB

考慮すべき理由
G Skill Intl F4-3200C14-16GTZKY 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

20 28

周辺 -40% 低遅延
読み出し速度の高速化、GB/s

18.4 10.9

テスト平均値
書き込み速度の高速化、GB/s

14.2 7.1

テスト平均値
より高いメモリ帯域幅、mbps

17000 8500

周辺 2 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

G Skill Intl F4-3200C14-16GTZKY 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 20
読み出し速度、GB/s

10.9 18.4
書き込み速度、GB/秒

7.1 14.2
メモリ帯域幅、mbps

8500 17000

Other

商品説明

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
タイミング / クロック速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

1668 3540

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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