Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Samsung M378A5143EB1-CPB 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

総合得点

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 14.6

テスト平均値

Samsung M378A5143EB1-CPB 4GB

考慮すべき理由
Samsung M378A5143EB1-CPB 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

38 65

周辺 -71% 低遅延
書き込み速度の高速化、GB/s

10.8 1,592.0

テスト平均値
より高いメモリ帯域幅、mbps

17000 5300

周辺 3.21 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Samsung M378A5143EB1-CPB 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

65 38
読み出し速度、GB/s

3,580.8 14.6
書き込み速度、GB/秒

1,592.0 10.8
メモリ帯域幅、mbps

5300 17000

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
タイミング / クロック速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

572 2298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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