Micron Technology 16KTF51264HZ-1G6M1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

総合得点

Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

相違点仕様コメント

相違点

Micron Technology 16KTF51264HZ-1G6M1 4GB

考慮すべき理由
Micron Technology 16KTF51264HZ-1G6M1 4GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

32 43

周辺 -34% 低遅延
読み出し速度の高速化、GB/s

11.5 10.6

テスト平均値
書き込み速度の高速化、GB/s

7.4 6.9

テスト平均値

仕様

技術仕様の完全リスト

Micron Technology 16KTF51264HZ-1G6M1 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

43 32
読み出し速度、GB/s

10.6 11.5
書き込み速度、GB/秒

6.9 7.4
メモリ帯域幅、mbps

12800 12800

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
タイミング / クロック速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
ランキングPassMark（多ければ多いほど良い）

1647 1919

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Essencore Limited KD4AGU88C-26N190A 16GB

Essencore Limited KD4AGU88C-26N190A 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Apacer Technology 78.CAGP7.AZ20B 8GB

Apacer Technology 78.CAGP7.AZ20B 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology C 8GB

Crucial Technology C 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston KHX21334D4/8G 8GB

Kingston KHX21334D4/8G 8GB

Kingston KHX8500D2K2/2GN 1GB

Kingston KHX8500D2K2/2GN 1GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-3600C16-8GTZKW 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

AMD R7416G2400U2S 16GB

AMD R7416G2400U2S 16GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB