Micron Technology 16KTF51264HZ-1G6M1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

総合得点

Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

相違点仕様コメント

相違点

Micron Technology 16KTF51264HZ-1G6M1 4GB

考慮すべき理由
Micron Technology 16KTF51264HZ-1G6M1 4GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

32 43

周辺 -34% 低遅延
読み出し速度の高速化、GB/s

11.5 10.6

テスト平均値
書き込み速度の高速化、GB/s

7.4 6.9

テスト平均値

仕様

技術仕様の完全リスト

Micron Technology 16KTF51264HZ-1G6M1 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

43 32
読み出し速度、GB/s

10.6 11.5
書き込み速度、GB/秒

6.9 7.4
メモリ帯域幅、mbps

12800 12800

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
タイミング / クロック速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
ランキングPassMark（多ければ多いほど良い）

1647 1919

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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