Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

総合得点

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

相違点仕様コメント

相違点

Nanya Technology NT4GC64B8HG0NS-CG 4GB

考慮すべき理由
Nanya Technology NT4GC64B8HG0NS-CG 4GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 42

周辺 -45% 低遅延
読み出し速度の高速化、GB/s

12.2 9.7

テスト平均値
書き込み速度の高速化、GB/s

8.8 6.0

テスト平均値
より高いメモリ帯域幅、mbps

12800 10600

周辺 1.21 高帯域

仕様

技術仕様の完全リスト

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

42 29
読み出し速度、GB/s

9.7 12.2
書き込み速度、GB/秒

6.0 8.8
メモリ帯域幅、mbps

10600 12800

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
タイミング / クロック速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
ランキングPassMark（多ければ多いほど良い）

1396 2036

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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