Nanya Technology NT4GC64C88B1NS-DI 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

総合得点

Nanya Technology NT4GC64C88B1NS-DI 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

相違点仕様コメント

相違点

Nanya Technology NT4GC64C88B1NS-DI 4GB

考慮すべき理由
Nanya Technology NT4GC64C88B1NS-DI 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 41

周辺 32% 低遅延
読み出し速度の高速化、GB/s

12.8 7.8

テスト平均値
書き込み速度の高速化、GB/s

8.4 6.1

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

バグを報告する

より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Nanya Technology NT4GC64C88B1NS-DI 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 41
読み出し速度、GB/s

12.8 7.8
書き込み速度、GB/秒

8.4 6.1
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2226 1512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology NT4GC64C88B1NS-DI 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

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Avant Technology J641GU42J5213N0 8GB

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Kingston KVR16N11/8-SP 8GB

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Micron Technology 8ATF51264AZ-2G1A1 4GB

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