Nanya Technology NT512T64U88B0BY-3C 512MB vs Corsair CMT16GX4M2C3600C18 8GB

総合得点

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

総合得点

Corsair CMT16GX4M2C3600C18 8GB

Corsair CMT16GX4M2C3600C18 8GB

相違点仕様コメント

相違点

Nanya Technology NT512T64U88B0BY-3C 512MB

考慮すべき理由
Nanya Technology NT512T64U88B0BY-3C 512MB

バグを報告する

Corsair CMT16GX4M2C3600C18 8GB

考慮すべき理由
Corsair CMT16GX4M2C3600C18 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 71

周辺 -154% 低遅延
読み出し速度の高速化、GB/s

20.9 2

テスト平均値
書き込み速度の高速化、GB/s

16.9 1,322.6

テスト平均値
より高いメモリ帯域幅、mbps

17000 5300

周辺 3.21 高帯域

仕様

技術仕様の完全リスト

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMT16GX4M2C3600C18 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

71 28
読み出し速度、GB/s

2,831.6 20.9
書き込み速度、GB/秒

1,322.6 16.9
メモリ帯域幅、mbps

5300 17000

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
タイミング / クロック速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

399 3835

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMT16GX4M2C3600C18 8GB

Corsair CMT16GX4M2C3600C18 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Transcend Information TS1GLH64V4H 8GB

Transcend Information TS1GLH64V4H 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CMW16GX4M1Z3600C18 16GB

Corsair CMW16GX4M1Z3600C18 16GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Asgard VMA41UH-MEC1U2AW1 16GB

Asgard VMA41UH-MEC1U2AW1 16GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

G Skill Intl F4-3200C16-4GRB 4GB

G Skill Intl F4-3200C16-4GRB 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMK32GX4M2L3000C15 16GB

Corsair CMK32GX4M2L3000C15 16GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

Samsung M3 78T5663FB3-CF7 2GB

Samsung M3 78T5663FB3-CF7 2GB

G Skill Intl F4-3200C16-8GTRG 8GB

G Skill Intl F4-3200C16-8GTRG 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Kingston 9965589-037.D00G 8GB

Kingston 9965589-037.D00G 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston 99U5704-001.A00G 4GB

Kingston 99U5704-001.A00G 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-4800C18-8GTRG 8GB

G Skill Intl F4-4800C18-8GTRG 8GB