Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs G Skill Intl F4-3200C16-4GTZ 4GB

総合得点

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

総合得点

G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

相違点仕様コメント

相違点

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

考慮すべき理由
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

バグを報告する

G Skill Intl F4-3200C16-4GTZ 4GB

考慮すべき理由
G Skill Intl F4-3200C16-4GTZ 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

21 35

周辺 -67% 低遅延
読み出し速度の高速化、GB/s

18 13.7

テスト平均値
書き込み速度の高速化、GB/s

13.8 9.6

テスト平均値
より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

35 21
読み出し速度、GB/s

13.7 18.0
書き込み速度、GB/秒

9.6 13.8
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2312 3034

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-4000C18-32GTZN 32GB

G Skill Intl F4-4000C18-32GTZN 32GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Corsair CMSX8GX4M2A2666C18 4GB

Corsair CMSX8GX4M2A2666C18 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

G Skill Intl F4-3800C14-8GTZN 8GB

G Skill Intl F4-3800C14-8GTZN 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMK8GX4M2A2400C16 4GB

Corsair CMK8GX4M2A2400C16 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Kingston K9CXF2-MIE 8GB

Kingston K9CXF2-MIE 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266