PNY Electronics PNY 2GB vs Essencore Limited KD4AGU880-32A160T 16GB

総合得点

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

総合得点

Essencore Limited KD4AGU880-32A160T 16GB

Essencore Limited KD4AGU880-32A160T 16GB

相違点仕様コメント

相違点

PNY Electronics PNY 2GB

考慮すべき理由
PNY Electronics PNY 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 31

周辺 13% 低遅延

Essencore Limited KD4AGU880-32A160T 16GB

考慮すべき理由
Essencore Limited KD4AGU880-32A160T 16GB

バグを報告する

読み出し速度の高速化、GB/s

15.5 13.8

テスト平均値
書き込み速度の高速化、GB/s

10.5 8.4

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

PNY Electronics PNY 2GB

Essencore Limited KD4AGU880-32A160T 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

27 31
読み出し速度、GB/s

13.8 15.5
書き込み速度、GB/秒

8.4 10.5
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2274 2936

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Essencore Limited KD4AGU880-32A160T 16GB

Essencore Limited KD4AGU880-32A160T 16GB

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Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-4000C18-8GTRG 8GB

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Kingston 9905702-008.A00G 8GB

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Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

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Crucial Technology CT102464BF160B-16F 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Crucial Technology BLS16G4S26BFSD.16FBD 16GB

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Kingston 9965516-112.A00LF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N