Samsung 1600 CL10 Series 8GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

総合得点

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

総合得点

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

相違点仕様コメント

相違点

Samsung 1600 CL10 Series 8GB

考慮すべき理由
Samsung 1600 CL10 Series 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 26

周辺 4% 低遅延

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

考慮すべき理由
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

バグを報告する

読み出し速度の高速化、GB/s

18.2 16.1

テスト平均値
書き込み速度の高速化、GB/s

17.3 10.1

テスト平均値
より高いメモリ帯域幅、mbps

21300 12800

周辺 1.66 高帯域

仕様

技術仕様の完全リスト

Samsung 1600 CL10 Series 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

25 26
読み出し速度、GB/s

16.1 18.2
書き込み速度、GB/秒

10.1 17.3
メモリ帯域幅、mbps

12800 21300

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2764 3938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMK16GX4M4B3200C16 4GB

Corsair CMK16GX4M4B3200C16 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB

Kingston 9905402-534.A00LF 4GB

Kingston 9905402-534.A00LF 4GB

Crucial Technology BL16G32C16U4R.M16FE 16GB

Crucial Technology BL16G32C16U4R.M16FE 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Corsair CMN16GX4M2Z3200C16 8GB

Corsair CMN16GX4M2Z3200C16 8GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Gloway International Co. Ltd. TYA4U2666D19321C 32GB

Gloway International Co. Ltd. TYA4U2666D19321C 32GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMZ32GX3M4A1866C10 8GB

Corsair CMZ32GX3M4A1866C10 8GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMK32GX4M4K4333C19 8GB

Corsair CMK32GX4M4K4333C19 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-4400C17-16GTZR 16GB

G Skill Intl F4-4400C17-16GTZR 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

SK Hynix HMA82GS6AFR8N-UH 16GB

SK Hynix HMA82GS6AFR8N-UH 16GB