Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-2666C19-16GIS 16GB

総合得点

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

総合得点

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

相違点仕様コメント

相違点

Samsung 1600 CL10 Series 8GB

考慮すべき理由
Samsung 1600 CL10 Series 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 34

周辺 26% 低遅延

G Skill Intl F4-2666C19-16GIS 16GB

考慮すべき理由
G Skill Intl F4-2666C19-16GIS 16GB

バグを報告する

読み出し速度の高速化、GB/s

16.5 16.1

テスト平均値
書き込み速度の高速化、GB/s

12.8 10.1

テスト平均値
より高いメモリ帯域幅、mbps

21300 12800

周辺 1.66 高帯域

仕様

技術仕様の完全リスト

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-2666C19-16GIS 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

25 34
読み出し速度、GB/s

16.1 16.5
書き込み速度、GB/秒

10.1 12.8
メモリ帯域幅、mbps

12800 21300

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
タイミング / クロック速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2764 3193

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C18-8GTZRX 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

Patriot Memory (PDP Systems) PSD48G266682 8GB

Patriot Memory (PDP Systems) PSD48G266682 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Nanya Technology M471A5143EB1-CRC 4GB

Nanya Technology M471A5143EB1-CRC 4GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Samsung M392A4K40BM0-CRC 32GB

Samsung M392A4K40BM0-CRC 32GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB