Samsung 1600 CL10 Series 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

総合得点

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

相違点仕様コメント

相違点

Samsung 1600 CL10 Series 8GB

考慮すべき理由
Samsung 1600 CL10 Series 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 26

周辺 4% 低遅延

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

バグを報告する

読み出し速度の高速化、GB/s

16.2 16.1

テスト平均値
書き込み速度の高速化、GB/s

12.6 10.1

テスト平均値
より高いメモリ帯域幅、mbps

21300 12800

周辺 1.66 高帯域

仕様

技術仕様の完全リスト

Samsung 1600 CL10 Series 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

25 26
読み出し速度、GB/s

16.1 16.2
書き込み速度、GB/秒

10.1 12.6
メモリ帯域幅、mbps

12800 21300

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2764 2955

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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