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Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Samsung 1600 CL10 Series 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 26
    左右 4% 更低的延时
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 26
  • 读取速度，GB/s
    16.1 left arrow 16.2
  • 写入速度，GB/s
    10.1 left arrow 12.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2955

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB RAM的比较

A-DATA Technology DDR4 2666 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
内存RAM
Patriot Memory (PDP Systems) PSD22G6672 2GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905678-121.A00G 8GB
Kingston 9905678-121.A00G 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
内存RAM
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Corsair CMW128GX4M8C3000C16 16GB
Corsair CMW128GX4M8C3000C16 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston HP26D4S9S8HJ-8 8GB
Kingston HP26D4S9S8HJ-8 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.CAGMT.40C0B 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M393A1K43BB1-CTD 8GB
Samsung M393A1K43BB1-CTD 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Super Talent F21UB8GS 8GB
Super Talent F21UB8GS 8GB
内存RAM