Samsung M393B2G70BH0-CK0 16GB vs A-DATA Technology AO2P24HC8T1-BTBS 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

更快的写入速度，GB/s

8.1 7.9

测试中的平均数值

A-DATA Technology AO2P24HC8T1-BTBS 8GB

需要考虑的原因
A-DATA Technology AO2P24HC8T1-BTBS 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 54

左右 -54% 更低的延时
更快的读取速度，GB/s

13.7 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 35
读取速度，GB/s

9.2 13.7
写入速度，GB/s

8.1 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 2237

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M2A2400C14 8GB

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Kingston 9965525-140.A00LF 8GB

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Kingston KHX2933C17D4/8G 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMA451U7MFR8N-TF 4GB

SK Hynix HMA451U7MFR8N-TF 4GB

Corsair CMD8GX3M2A2933C12 4GB

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Kingston 9905712-016.A00G 16GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

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Samsung 1600 CL10 Series 8GB

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Samsung M378A2G43AB3-CWE 16GB

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AMD R5S38G1601U2S 8GB

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Micron Technology 18ASF2G72AZ-2G1B1 16GB

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G Skill Intl F4-2400C16-8GFX 8GB

G Skill Intl F4-2400C16-8GFX 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston KF3733C19D4/16GX 16GB

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Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3400C16-8GTZ 8GB

G Skill Intl F4-3400C16-8GTZ 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB