Samsung 1600 CL10 Series 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

総合得点

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

相違点仕様コメント

相違点

Samsung 1600 CL10 Series 8GB

考慮すべき理由
Samsung 1600 CL10 Series 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 36

周辺 31% 低遅延
読み出し速度の高速化、GB/s

16.1 9.3

テスト平均値
書き込み速度の高速化、GB/s

10.1 7.0

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

バグを報告する

より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Samsung 1600 CL10 Series 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

25 36
読み出し速度、GB/s

16.1 9.3
書き込み速度、GB/秒

10.1 7.0
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2764 1891

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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