Samsung M3 78T2953EZ3-CF7 1GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

総合得点

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

総合得点

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

相違点仕様コメント

相違点

Samsung M3 78T2953EZ3-CF7 1GB

考慮すべき理由
Samsung M3 78T2953EZ3-CF7 1GB

バグを報告する

読み出し速度の高速化、GB/s

4 18.5

テスト平均値

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

考慮すべき理由
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 58

周辺 -107% 低遅延
書き込み速度の高速化、GB/s

15.7 1,950.7

テスト平均値
より高いメモリ帯域幅、mbps

17000 6400

周辺 2.66 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T2953EZ3-CF7 1GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

58 28
読み出し速度、GB/s

4,241.0 18.5
書き込み速度、GB/秒

1,950.7 15.7
メモリ帯域幅、mbps

6400 17000

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 14 15 16
タイミング / クロック速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

651 3601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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