Samsung M3 78T3354BZ0-CCC 256MB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

総合得点

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

総合得点

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

相違点仕様コメント

相違点

Samsung M3 78T3354BZ0-CCC 256MB

考慮すべき理由
Samsung M3 78T3354BZ0-CCC 256MB

バグを報告する

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

考慮すべき理由
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

18 46

周辺 -156% 低遅延
読み出し速度の高速化、GB/s

20.2 2

テスト平均値
書き込み速度の高速化、GB/s

16.2 1,519.2

テスト平均値
より高いメモリ帯域幅、mbps

19200 3200

周辺 6 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T3354BZ0-CCC 256MB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 18
読み出し速度、GB/s

2,909.8 20.2
書き込み速度、GB/秒

1,519.2 16.2
メモリ帯域幅、mbps

3200 19200

Other

商品説明

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
タイミング / クロック速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

241 3536

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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