Samsung M3 78T5663EH3-CF7 2GB vs Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

総合得点

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

総合得点

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

相違点仕様コメント

相違点

Samsung M3 78T5663EH3-CF7 2GB

考慮すべき理由
Samsung M3 78T5663EH3-CF7 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 18.8

テスト平均値
書き込み速度の高速化、GB/s

2,451.8 15.6

テスト平均値

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

考慮すべき理由
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

26 65

周辺 -150% 低遅延
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T5663EH3-CF7 2GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

65 26
読み出し速度、GB/s

4,605.9 18.8
書き込み速度、GB/秒

2,451.8 15.6
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

878 3733

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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RAM 2

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