Samsung M3 93T5750CZA-CE6 2GB vs Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

総合得点

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

総合得点

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

相違点仕様コメント

相違点

Samsung M3 93T5750CZA-CE6 2GB

考慮すべき理由
Samsung M3 93T5750CZA-CE6 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 14.8

テスト平均値
書き込み速度の高速化、GB/s

2,622.0 11.6

テスト平均値

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

考慮すべき理由
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

47 77

周辺 -64% 低遅延
より高いメモリ帯域幅、mbps

21300 5300

周辺 4.02 高帯域

仕様

技術仕様の完全リスト

Samsung M3 93T5750CZA-CE6 2GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

77 47
読み出し速度、GB/s

3,405.2 14.8
書き込み速度、GB/秒

2,622.0 11.6
メモリ帯域幅、mbps

5300 21300

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

763 2875

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

G Skill Intl F4-3000C15-8GTZ 8GB

G Skill Intl F4-3000C15-8GTZ 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9905702-002.A00G 8GB

Kingston 9905702-002.A00G 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F4-2800C17-8GIS 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Mushkin MR[A/B]280HHHH16G 16GB

Mushkin MR[A/B]280HHHH16G 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Transcend Information TS512MSH64V4H 4GB

Transcend Information TS512MSH64V4H 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMK16GX4M4A2400C14 4GB

Corsair CMK16GX4M4A2400C14 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-3600C17-8GVK 8GB

G Skill Intl F4-3600C17-8GVK 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CMR16GX4M2C3466C16 8GB

Corsair CMR16GX4M2C3466C16 8GB