Samsung M378A1G43DB0-CPB 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

総合得点

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

相違点仕様コメント

相違点

Samsung M378A1G43DB0-CPB 8GB

考慮すべき理由
Samsung M378A1G43DB0-CPB 8GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

23 36

周辺 -57% 低遅延
読み出し速度の高速化、GB/s

17.5 15

テスト平均値
書き込み速度の高速化、GB/s

14.6 10.3

テスト平均値
より高いメモリ帯域幅、mbps

21300 17000

周辺 1.25 高帯域

仕様

技術仕様の完全リスト

Samsung M378A1G43DB0-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

36 23
読み出し速度、GB/s

15.0 17.5
書き込み速度、GB/秒

10.3 14.6
メモリ帯域幅、mbps

17000 21300

Other

商品説明

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2569 3260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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