Samsung M378B5673EH1-CF8 2GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

総合得点

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

総合得点

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

相違点仕様コメント

相違点

Samsung M378B5673EH1-CF8 2GB

考慮すべき理由
Samsung M378B5673EH1-CF8 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 30

周辺 7% 低遅延

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

考慮すべき理由
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

バグを報告する

読み出し速度の高速化、GB/s

17.6 12.7

テスト平均値
書き込み速度の高速化、GB/s

13.9 7.5

テスト平均値
より高いメモリ帯域幅、mbps

17000 8500

周辺 2 高帯域

仕様

技術仕様の完全リスト

Samsung M378B5673EH1-CF8 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 30
読み出し速度、GB/s

12.7 17.6
書き込み速度、GB/秒

7.5 13.9
メモリ帯域幅、mbps

8500 17000

Other

商品説明

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 14 15 16
タイミング / クロック速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

1988 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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