Samsung M378T5663QZ3-CF7 2GB vs Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

総合得点

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

総合得点

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

相違点仕様コメント

相違点

Samsung M378T5663QZ3-CF7 2GB

考慮すべき理由
Samsung M378T5663QZ3-CF7 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

56 71

周辺 21% 低遅延
読み出し速度の高速化、GB/s

4 14.5

テスト平均値

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

考慮すべき理由
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

バグを報告する

書き込み速度の高速化、GB/s

8.0 1,813.5

テスト平均値
より高いメモリ帯域幅、mbps

21300 6400

周辺 3.33 高帯域

仕様

技術仕様の完全リスト

Samsung M378T5663QZ3-CF7 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

56 71
読み出し速度、GB/s

4,387.7 14.5
書き込み速度、GB/秒

1,813.5 8.0
メモリ帯域幅、mbps

6400 21300

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

693 1863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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