Samsung M393B1G70BH0-CK0 8GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

総合得点

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

総合得点

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

相違点仕様コメント

相違点

Samsung M393B1G70BH0-CK0 8GB

考慮すべき理由
Samsung M393B1G70BH0-CK0 8GB

バグを報告する

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

考慮すべき理由
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

37 51

周辺 -38% 低遅延
読み出し速度の高速化、GB/s

16.9 9.8

テスト平均値
書き込み速度の高速化、GB/s

13.8 8.1

テスト平均値
より高いメモリ帯域幅、mbps

25600 12800

周辺 2 高帯域

仕様

技術仕様の完全リスト

Samsung M393B1G70BH0-CK0 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

51 37
読み出し速度、GB/s

9.8 16.9
書き込み速度、GB/秒

8.1 13.8
メモリ帯域幅、mbps

12800 25600

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
タイミング / クロック速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2208 3170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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