Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

総合得点

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

相違点仕様コメント

相違点

Samsung M395T2863QZ4-CF76 1GB

考慮すべき理由
Samsung M395T2863QZ4-CF76 1GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

35 104

周辺 -197% 低遅延
読み出し速度の高速化、GB/s

9.8 3

テスト平均値
書き込み速度の高速化、GB/s

7.9 2,404.5

テスト平均値
より高いメモリ帯域幅、mbps

17000 6400

周辺 2.66 高帯域

仕様

技術仕様の完全リスト

Samsung M395T2863QZ4-CF76 1GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

104 35
読み出し速度、GB/s

3,192.0 9.8
書き込み速度、GB/秒

2,404.5 7.9
メモリ帯域幅、mbps

6400 17000

Other

商品説明

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

786 2126

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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