Samsung M4 70T2953EZ3-CE6 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

総合得点

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

相違点仕様コメント

相違点

Samsung M4 70T2953EZ3-CE6 1GB

考慮すべき理由
Samsung M4 70T2953EZ3-CE6 1GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

36 73

周辺 -103% 低遅延
読み出し速度の高速化、GB/s

9.1 3

テスト平均値
書き込み速度の高速化、GB/s

7.9 1,423.3

テスト平均値
より高いメモリ帯域幅、mbps

17000 5300

周辺 3.21 高帯域

仕様

技術仕様の完全リスト

Samsung M4 70T2953EZ3-CE6 1GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

73 36
読み出し速度、GB/s

3,510.5 9.1
書き込み速度、GB/秒

1,423.3 7.9
メモリ帯域幅、mbps

5300 17000

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22
タイミング / クロック速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

476 2090

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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