Samsung M471A1K43DB1-CTD 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

総合得点

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

相違点仕様コメント

相違点

Samsung M471A1K43DB1-CTD 8GB

考慮すべき理由
Samsung M471A1K43DB1-CTD 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

35 41

周辺 15% 低遅延
読み出し速度の高速化、GB/s

15.7 7.8

テスト平均値
書き込み速度の高速化、GB/s

11.8 6.1

テスト平均値
より高いメモリ帯域幅、mbps

21300 17000

周辺 1.25% 高帯域

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

バグを報告する

仕様

技術仕様の完全リスト

Samsung M471A1K43DB1-CTD 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

35 41
読み出し速度、GB/s

15.7 7.8
書き込み速度、GB/秒

11.8 6.1
メモリ帯域幅、mbps

21300 17000

Other

商品説明

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2767 1512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

EVGA 8GX-D4-3000-MR 8GB

EVGA 8GX-D4-3000-MR 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 99U5700-032.A00G 16GB

Kingston 99U5700-032.A00G 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMH16GX4M2Z3200C16 8GB

Corsair CMH16GX4M2Z3200C16 8GB

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

A-DATA Technology 11137401 8GB

A-DATA Technology 11137401 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

Kingston 9965640-015.A00G 32GB

Kingston 9965640-015.A00G 32GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB