Samsung M471A2K43EB1-CWE 16GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

総合得点

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

総合得点

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

相違点仕様コメント

相違点

Samsung M471A2K43EB1-CWE 16GB

考慮すべき理由
Samsung M471A2K43EB1-CWE 16GB

バグを報告する

読み出し速度の高速化、GB/s

15.8 12.2

テスト平均値
書き込み速度の高速化、GB/s

13.8 9.3

テスト平均値
より高いメモリ帯域幅、mbps

25600 19200

周辺 1.33% 高帯域

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

考慮すべき理由
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 55

周辺 -96% 低遅延

仕様

技術仕様の完全リスト

Samsung M471A2K43EB1-CWE 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

55 28
読み出し速度、GB/s

15.8 12.2
書き込み速度、GB/秒

13.8 9.3
メモリ帯域幅、mbps

25600 19200

Other

商品説明

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2701 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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