Samsung M471B5273CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

総合得点

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

相違点仕様コメント

相違点

Samsung M471B5273CH0-CH9 4GB

考慮すべき理由
Samsung M471B5273CH0-CH9 4GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

32 48

周辺 -50% 低遅延
読み出し速度の高速化、GB/s

11.5 8.9

テスト平均値
書き込み速度の高速化、GB/s

7.4 5.9

テスト平均値
より高いメモリ帯域幅、mbps

12800 10600

周辺 1.21 高帯域

仕様

技術仕様の完全リスト

Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

48 32
読み出し速度、GB/s

8.9 11.5
書き込み速度、GB/秒

5.9 7.4
メモリ帯域幅、mbps

10600 12800

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
タイミング / クロック速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
ランキングPassMark（多ければ多いほど良い）

1420 1919

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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