Samsung M471B5273CH0-CH9 4GB vs Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

総合得点

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

総合得点

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

相違点仕様コメント

相違点

Samsung M471B5273CH0-CH9 4GB

考慮すべき理由
Samsung M471B5273CH0-CH9 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

48 71

周辺 32% 低遅延

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

考慮すべき理由
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

バグを報告する

読み出し速度の高速化、GB/s

14.5 8.9

テスト平均値
書き込み速度の高速化、GB/s

8.0 5.9

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

Samsung M471B5273CH0-CH9 4GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

48 71
読み出し速度、GB/s

8.9 14.5
書き込み速度、GB/秒

5.9 8.0
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

1420 1863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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