SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

総合得点

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

総合得点

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

相違点仕様コメント

相違点

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

考慮すべき理由
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

バグを報告する

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

考慮すべき理由
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 46

周辺 -59% 低遅延
読み出し速度の高速化、GB/s

22.8 14.2

テスト平均値
書き込み速度の高速化、GB/s

16.9 13.6

テスト平均値

仕様

技術仕様の完全リスト

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

46 29
読み出し速度、GB/s

14.2 22.8
書き込み速度、GB/秒

13.6 16.9
メモリ帯域幅、mbps

21300 21300

Other

商品説明

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2717 3792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

G Skill Intl F4-4000C18-8GTZKW 8GB

G Skill Intl F4-4000C18-8GTZKW 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Transcend Information AQD-SD4U8GE21-SG 8GB

Transcend Information AQD-SD4U8GE21-SG 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Corsair CMU32GX4M4C3000C15 8GB

Corsair CMU32GX4M4C3000C15 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

INTENSO M418039 8GB

INTENSO M418039 8GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Crucial Technology CT8G4DFD824A.C16FHP 8GB

Crucial Technology CT8G4DFD824A.C16FHP 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

G Skill Intl F4-4800C18-8GTRS 8GB

G Skill Intl F4-4800C18-8GTRS 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology CT16G4SFD832A.M16FRS 16GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB