SK Hynix HMA451U6AFR8N-TF 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

総合得点

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

総合得点

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

相違点仕様コメント

相違点

SK Hynix HMA451U6AFR8N-TF 4GB

考慮すべき理由
SK Hynix HMA451U6AFR8N-TF 4GB

バグを報告する

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

考慮すべき理由
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

19 37

周辺 -95% 低遅延
読み出し速度の高速化、GB/s

19.5 14.7

テスト平均値
書き込み速度の高速化、GB/s

15.8 10.6

テスト平均値
より高いメモリ帯域幅、mbps

19200 17000

周辺 1.13 高帯域

仕様

技術仕様の完全リスト

SK Hynix HMA451U6AFR8N-TF 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

37 19
読み出し速度、GB/s

14.7 19.5
書き込み速度、GB/秒

10.6 15.8
メモリ帯域幅、mbps

17000 19200

Other

商品説明

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
タイミング / クロック速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2438 3435

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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