STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Crucial Technology CT16G4DFD8266.M16FH 16GB

総合得点

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

総合得点

Crucial Technology CT16G4DFD8266.M16FH 16GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

相違点仕様コメント

相違点

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

考慮すべき理由
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

バグを報告する

読み出し速度の高速化、GB/s

3 17

テスト平均値

Crucial Technology CT16G4DFD8266.M16FH 16GB

考慮すべき理由
Crucial Technology CT16G4DFD8266.M16FH 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 63

周辺 -163% 低遅延
書き込み速度の高速化、GB/s

13.7 1,447.3

テスト平均値
より高いメモリ帯域幅、mbps

21300 5300

周辺 4.02 高帯域

仕様

技術仕様の完全リスト

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

63 24
読み出し速度、GB/s

3,231.0 17.0
書き込み速度、GB/秒

1,447.3 13.7
メモリ帯域幅、mbps

5300 21300

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
タイミング / クロック速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

478 3230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Crucial Technology CT16G4SFRA32A.C8FE 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology CT16G4S24AM.M16FB 16GB

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Samsung M471A2K43CB1-CTCT 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

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Samsung M471B5273DH0-CH9 4GB

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Kingston 16ATF2G64AZ-2G1B1 8GB

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Patriot Memory (PDP Systems) PSD416G21332 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

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