takeMS International AG TMS2GB264D082-805G 2GB vs Micron Technology 18ASF1G72PDZ-2G1B1 8GB

総合得点

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

総合得点

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

相違点仕様コメント

相違点

takeMS International AG TMS2GB264D082-805G 2GB

考慮すべき理由
takeMS International AG TMS2GB264D082-805G 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

46 54

周辺 15% 低遅延

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

考慮すべき理由
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

バグを報告する

読み出し速度の高速化、GB/s

9.3 5

テスト平均値
書き込み速度の高速化、GB/s

7.3 1,852.4

テスト平均値
より高いメモリ帯域幅、mbps

17000 6400

周辺 2.66 高帯域

仕様

技術仕様の完全リスト

takeMS International AG TMS2GB264D082-805G 2GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 54
読み出し速度、GB/s

5,535.6 9.3
書き込み速度、GB/秒

1,852.4 7.3
メモリ帯域幅、mbps

6400 17000

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
タイミング / クロック速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

858 1904

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

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0 ns

最新の比較

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston 9965669-017.A00G 16GB

Kingston 9965669-017.A00G 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4400C19-16GTZR 16GB

G Skill Intl F4-4400C19-16GTZR 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905702-082.A00G 8GB

Kingston 9905702-082.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

Corsair CMW64GX4M8Z2933C16 8GB

Corsair CMW64GX4M8Z2933C16 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston ACR24D4U7S8MB-8 8GB

Kingston ACR24D4U7S8MB-8 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

Crucial Technology CT16G4SFS832A.C8FB 16GB