takeMS International AG TMS2GB264D083805EV 2GB vs Micron Technology 4ATF51264AZ-2G3E1 4GB

総合得点

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

総合得点

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

相違点仕様コメント

相違点

takeMS International AG TMS2GB264D083805EV 2GB

考慮すべき理由
takeMS International AG TMS2GB264D083805EV 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 15

テスト平均値

Micron Technology 4ATF51264AZ-2G3E1 4GB

考慮すべき理由
Micron Technology 4ATF51264AZ-2G3E1 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 50

周辺 -85% 低遅延
書き込み速度の高速化、GB/s

10.9 1,457.4

テスト平均値
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

takeMS International AG TMS2GB264D083805EV 2GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

50 27
読み出し速度、GB/s

3,757.3 15.0
書き込み速度、GB/秒

1,457.4 10.9
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

557 2288

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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