Samsung M378B5273DH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Samsung M378B5273DH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Wynik ogólny

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Wynik ogólny

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Różnice Specyfikacje Uwagi

Różnice

Samsung M378B5273DH0-CH9 4GB

Powody do rozważenia
Samsung M378B5273DH0-CH9 4GB

Większa szybkość odczytu, GB/s

13.3 12.8

Średnia wartość w badaniach

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Powody do rozważenia
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Poniżej opóźnienia w testach PassMark, ns

26 41

Wokół strony -58% niższe opóźnienia

Specyfikacje

Pełna lista specyfikacji technicznych

Samsung M378B5273DH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Główna charakterystyka

Typ pamięci

DDR3 DDR3
Opóźnienie w PassMark, ns

41 26
Prędkość odczytu, GB/s

13.3 12.8
Prędkość zapisu, GB/s

8.3 8.3
Szerokość pasma pamięci, mbps

10600 10600

Other

Opis

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
Taktowanie / szybkość zegara

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Ranking PassMark (im więcej tym lepiej)

2176 2186

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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