Samsung M378B5273DH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

総合得点

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

相違点仕様コメント

相違点

Samsung M378B5273DH0-CH9 4GB

考慮すべき理由
Samsung M378B5273DH0-CH9 4GB

バグを報告する

読み出し速度の高速化、GB/s

13.3 12.8

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

26 41

周辺 -58% 低遅延

仕様

技術仕様の完全リスト

Samsung M378B5273DH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

41 26
読み出し速度、GB/s

13.3 12.8
書き込み速度、GB/秒

8.3 8.3
メモリ帯域幅、mbps

10600 10600

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
タイミング / クロック速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

2176 2186

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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